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[电子通讯] 半导体激光器增益曲线的测量

  • 简介:摘要: 在本文中,我们首先介绍了半导体激光器的发展历史以及发展趋势。接着又对增益曲线的重要性及其测量原理进行了详细介绍。结合实验,对激光器的自发发射谱的特性进行了研究。采用黑基-保利的测量方法,以自发发射的F-P谐振的极大值与极小值之比作为...
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目录 摘要 …………………………………………………………………………… 2
Abstract…………………………………………………………………………… 2
第一章 前言…………………………………………………………………… 3
一、半导体激光器的产生和发展……………………………………………… 3
二、研究半导体激光器增益曲线的意义……………………………………… 5
三、本文的工作 ………………………………………………………………… 5
第二章 半导体激光器的基本结构及原理…………………………………… 6
一、半导体激光器的结构………………………………………………… 6
二、半导体激光器的能带结构…………………………………………… 7
三、半导体受激光发射放大的条件……………………………………… 9
第三章 增益曲线的理论分析………………………………….…………… 11
一、半导体中的光吸收和发射率…………………………………………… 11
二、与浓度有关的态密度…………………………………………………… 12
三、计算的增益谱…………………………………………………………… 13
四、增益系数的计算………………………………………………………… 13
第四章 结合实验研究半导体激光器的增益特性……………………… 15
一、半导体激光器基本参数的测量………………………………………… 15
二、实验结果的分析处理…………………………………………………… 17
三、讨论……………………………………………………………………… 20
第五章 结论……………………………………………………………………… 21
致谢……………………………………………………………………………… 22
参考文献………………………………………………………………………… 23
附:翻译及原文…………………………………………………………………… 25 参考资料 [1] Hakki B W , Paoli T L , J.A.P , 1973; 44: 4113
[2] 李大义, 卢玉村,陈建国 et al. ,真空科学和技术,1989; 9:150
[3] Kaminow I P, Eisenstein C, stulz L W, IEEE J.Q.E., 1983; QE-19: 483
[4] Kressel H, Bulter J K, Semiconductor Laser and Heterojunction LEDs,
New York: Academic Press, 1977: 60
[5] Stern F, J.A.P.,1976; 47:5328
[6] 罗斌,武岚,李大义,卢玉村,陈建国, 激光技术,1991;2,
[7] T.Lee, C.A.Copeland, A.G.Dentai,znd D.Marcuse, IEEE J.Quantum
Electron.QE-18,1101(1982)
[8] B.Luo, L.Wu, J.Chen, and Y.Lu,”Determination of wavelength dependence of the reflectivity at AR-coated diode facets”, IEEE Photon.Technol.Lett. (to be published)
[9] L.Thylen,IEEE J.Quantum Electron.24,1532(1988).
[10] G.P.Agrawal and N.K.Dutta, Long-Wavelength Semiconductor Laser (Van Nostrand Reinhold. New York, 1986)
[11] K.Kisjhino, S.Aoki, and Y.Suemaysu, IEEE J.Quantum Electron. QE-18,343 (1982) .
[12] G.Xia, Z.Wu, J.Chen, and Y.Lu, Optics Letters, No.10, Vol.19, 731,1994
[13] E.Dietrich , B.Enning , G. Grosskope , L. Kuller , R.Ludwig , R.Molt , and G.Weber , “Semiconductor laser optical amplifiers for mjltichannel coherent optical transmission ”,J.Lightwave Technol , vol. 7, pp. 1941-1955, 1989.
[14] T.Saitoh and T.Mukai , “Recent progress in semiconductor laser amplitiers”,J.Lightwave Technol . vol.6,pp.1656-1664,1988.
[15] M.J.O’Mahony , “Semiconductor laser optical amplifiers for use in future systems” , J.Lightwave Technol.,vol.6,pp.531-544,1988.
[16] I.P.Kaminow , G.Eisenstein , and L.W.Stulz , “Measurement of the model reflectivity of an antireflection coating on a superluminescent diode”,IEEE J.Quantum Electron.,vol.19 , pp.493-495 , 1983.
[17] G.Eisenstein , G.Raybon , and L.W.Stulz , “Deposition and measurements of electron-beam-evaporated SiOx antireflection coatings on InGaAsP injection laser facets”,J.Lightwave Technol.,vol.6,pp.12-15,1988.
[18] L.Thylen , “Amplified spontaneous emission and gain characteristics of Fabry-Perot and traveling wave-type semiconductor laser amplifiers”,IEEE J.Qyantum Electron.,vol.24,pp. 1532-1537, 1988.
[19] J.Chen , D. Li, and Y.Lu , “Experimental and theoretical studies on monitored signals from semiconductor diodes yndergoing antireflection coatings”,Appl.Opt.,vol.30,pp.4554-4559,1991.
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摘要:
在本文中,我们首先介绍了半导体激光器的发展历史以及发展趋势。接着又对增益曲线的重要性及其测量原理进行了详细介绍。结合实验,对激光器的自发发射谱的特性进行了研究。采用黑基-保利的测量方法,以自发发射的F-P谐振的极大值与极小值之比作为测量依据,得出了不同偏置电流下的增益曲线。半导体激光器的增益主要研究了增益曲线的以下特性:在阈值电流以下,随着电流的增加,增益曲线沿纵轴方向上移,峰值增益增大;并且,相同波长处,两个不同工作电流下的增益系数之差越来越小。对以上的几点我们都给出了理论的分析。

关键词:半导体激光器 增益曲线

Measurement of gain curves of semiconductor laser amplifiers

Abstract:
In this paper, we first introduce the history and future of the semiconductor lasers. Then the importance and principle of the measurement of the gain curves are demonstrated in detail. According to the experiment, the characteristics of the spontaneous emission spectra are analyzed. Using Hakki-Paoli’s method, and measure the ratio of the maximum and minimum value of the spontaneous emission of the F-P resonant cave, and gain curves of different bias current are obtained. And we mainly studied the following characteristics: When bellow the threshold, the curves shift upwards and the maximum value increase as the bias current rises; While the wavelength is the same, the difference of the gain coefficient between different bias current become smaller and smaller. For each characteristic we have explained theoretically.
Keywords: semiconductor lasers gain curves
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